Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma- assisted molecular beam epitaxy
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چکیده
Articles you may be interested in Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Effects of different plasma species (atomic N, metastable N 2 * , and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy Appl.
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Heteroepitaxial growth of wurtzite InN films on Si„111... exhibiting strong near-infrared photoluminescence at room temperature
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